unisonic technologies co., ltd SSM3K333R preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-736.a 6a, 30v n-channel power mosfet ? description the utc SSM3K333R is an n-channel power mosfet using utc?s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. the utc SSM3K333R is usually used in power management switching applications. ? features * r ds(on) <42m ? @ v gs =4.5v r ds(on) <28m ? @ v gs =10v * high switching speed * low gate charge (typ.=3.4nc) * low c rss (typ.=28pf) ? symbol 2.gate 1.source 3. drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 SSM3K333Rl-ae3-r SSM3K333Rg-ae3-r sot-23 s g d tape reel note: pin assignment: g: gate d: drain s: source ? marking
SSM3K333R preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw ver.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v drain current continuous i d (note 2) 6 a pulsed i dm (note 2) 12 a power dissipation p d (note 3) 1 w t=10s 2 w channel temperature t ch 150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those valu es beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. the channel temperature should not exceed 150c during use. 3. mounted on a fr4 board.(25.4 mm25.4mm1.6mm, cu pad: 645mm 2 ) ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =10ma, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d =0.1ma 1.3 2.5 v static drain-source on-state resistance r ds(on) v gs =4.5v, i d =3a (note 2) 25.7 42 m ? v gs =10v, i d =5a (note 2) 18.7 28 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =15v, f=1.0mhz 436 pf output capacitance c oss 77 pf reverse transfer capacitance c rss 28 pf switching parameters total gate charge q g v gs =4.5v, v dd =15v, i d =6a 3.4 nc gate to source charge q gs 1.8 nc gate to drain charge q gd 1.0 nc turn-on delay time t d ( on ) v dd =15v, i d =3a, v gs =0~4.5v, r g =10 ? 12 ns turn-off delay time t d ( off ) 9 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =6a, v gs =0v 0.85 1.2 v notes: 1. the channel temperature sh ould not exceed 150c during use. 2. pulse test
SSM3K333R preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-736.a ? test circuits and waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
